Episode Synopsis "Lecture 3A: The Ballistic MOSFET"

The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed intuitively in Lecture 2.

Listen "Lecture 3A: The Ballistic MOSFET"

More episodes of the podcast [Audio] Physics of Nanoscale MOSFETs

• Lecture 1: Review of MOSFET Fundamentals
• Lecture 6: Quantum Transport in Nanoscale FETs
• Lecture 7: Connection to the Bottom Up Approach
• Lecture 5: Application to State-of-the-Art FETs
• Lecture 3B: The Ballistic MOSFET
• Lecture 4: Scattering in Nanoscale MOSFETs
• Lecture 3A: The Ballistic MOSFET
• Lecture 2: Elementary Theory of the Nanoscale MOSFET
• Introduction: Physics of Nanoscale MOSFETs