In this episode, we’re zooming in on the atomic layer deposition (ALD) of chalcogenide alloys—a breakthrough driving the future of phase change memory and ovonic threshold switches. Join us as we unravel how ALD techniques are enabling the precise creation of advanced memory materials, including innovative GeSe/GeAsSeTe heterojunctions that deliver superior performance and durability. We’ll explore why these atomic-scale processes are so crucial for next-generation memory devices, and how they’re paving the way for faster, more reliable, and energy-efficient data storage solutions. Don’t miss this deep dive into the science powering tomorrow’s smart technology! Feature papers in this episode:1. https://pubs.acs.org/doi/abs/10.1021/acsaelm.0c006662. https://pubs.acs.org/doi/full/10.1021/acsnano.9b04233

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