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Listen "GaN Devices Design for High Voltages"
Episode Synopsis
Power-switching transistors built with gallium nitride (GaN) are superior to those built with silicon (Si). Odyssey Semiconductor has developed a method to achieve area-selective doped regions in GaN, opening the door to the realization of vertical-conduction devices. In this podcast with Mark Davidson, CEO of Odyssey Semiconductor, we will analyze the structure of GaN for high voltages.
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